Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
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=== Results === | === Results === | ||
A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]]. | A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then etc | ||
{| border="2" cellpadding="2" cellspacing="1" | |||
|- | |||
! Wafer number | |||
! Mask | |||
! Process B duration | |||
|- | |||
| 1 | |||
| Travka 05 | |||
| 17 cycles or 3:07 mins | |||
|- | |||
| 2 | |||
| Travka 05 | |||
| 34 cycles or 6:14 mins | |||
|- | |||
| 4 | |||
| Travka 10 | |||
| 17 cycles or 3:07 mins | |||
|- | |||
| 5 | |||
| Travka 10 | |||
| 34 cycles or 6:14 mins | |||
|- | |||
| 7 | |||
| Travka 20 | |||
| 17 cycles or 3:07 mins | |||
|- | |||
| 8 | |||
| Travka 20 | |||
| 34 cycles or 6:14 mins | |||
|- | |||
| 10 | |||
| Travka 10 | |||
| 17 cycles or 3:07 mins | |||
|- | |||
| 5 | |||
| Travka 10 | |||
| 34 cycles or 6:14 mins | |||
|} | |||