Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

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deepetch.
deepetch.


{| border="2" cellpadding="2" cellspacing="1"
{| border="2" cellpadding="2" cellspacing="1" align="left"
|+ The shallolr recipe
|+ The shallolr recipe
|-
|-
Line 58: Line 58:
|}
|}


 
{| border="2" cellpadding="2" cellspacing="1" align="right"
 
|+ The deepetc recipe
 
|-
 
! colspan="2" align="center"| Common parameters
 
! colspan="3" align="center"| Multiplexed parameters
 
|-
 
! Parameter 
 
! Setting
 
! Parameter
 
! Etch
 
! Passivation
 
|-
 
! Temperature
 
| 20<sup>o</sup>C
 
! SF<sub>6</sub> Flow
The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.
| 230 sccm
 
| 0 sccm
==The Bosch process:==
|-
 
! No. of cycles
The Bosch process uses alternation between an
| 250
etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>.
! O<sub>2</sub> Flow
 
| 23 sccm
Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch
| 0 sccm
deepetch.
|-
! Process time
| 54:10 mins
! C<sub>4</sub>F<sub>4</sub> Flow
| 0 sccm
| 120 sccm
|-
! APC mode
| manual
! RF coil
| 2800 W
| 1000 W
|-
! APC setting
| 87.7 %
! RF Platen
| 19 W
| 0 W
|-
!
|
! Cycle time
| 8 s
| 5 s
|}

Revision as of 17:37, 25 November 2007

The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.

The Bosch process:

The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF6 and O2 alternates with a passivation phase with C4F8.

Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch deepetch.

The shallolr recipe
Common parameters Multiplexed parameters
Parameter Setting Parameter Etch Passivation
Temperature 10oC SF6 Flow 260 sccm 0 sccm
No. of cycles 31 O2 Flow 26 sccm 0 sccm
Process time 5:56 mins C4F4 Flow 0 sccm 120 sccm
APC mode manual RF coil 2800 W 1000 W
APC setting 86.8 % RF Platen 16 W 0 W
Cycle time 6.5 s 5 s
The deepetc recipe
Common parameters Multiplexed parameters
Parameter Setting Parameter Etch Passivation
Temperature 20oC SF6 Flow 230 sccm 0 sccm
No. of cycles 250 O2 Flow 23 sccm 0 sccm
Process time 54:10 mins C4F4 Flow 0 sccm 120 sccm
APC mode manual RF coil 2800 W 1000 W
APC setting 87.7 % RF Platen 19 W 0 W
Cycle time 8 s 5 s
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