Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

@@ Line 9: / Line 9: @@
 deepetch.
-{| border="2" cellpadding="2" cellspacing="1"
+{| border="2" cellpadding="2" cellspacing="1" align="left"
 |+ The shallolr recipe
 |-
@@ Line 58: / Line 58: @@
 |}
+{| border="2" cellpadding="2" cellspacing="1" align="right"
+|+ The deepetc recipe
+|-
+! colspan="2" align="center"| Common parameters
+! colspan="3" align="center"| Multiplexed parameters
+|-
+! Parameter
+! Setting
+! Parameter
+! Etch
+! Passivation
+|-
+! Temperature
+| 20<sup>o</sup>C
+! SF<sub>6</sub> Flow
-The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.
+| 230 sccm
+| 0 sccm
-==The Bosch process:==
+|-
+! No. of cycles
-The Bosch process uses alternation between an
+| 250
-etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>.
+! O<sub>2</sub> Flow
+| 23 sccm
-Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch
+| 0 sccm
-deepetch.
+|-
+! Process time
+| 54:10 mins
+! C<sub>4</sub>F<sub>4</sub> Flow
+| 0 sccm
+| 120 sccm
+|-
+! APC mode
+| manual
+! RF coil
+| 2800 W
+| 1000 W
+|-
+! APC setting
+| 87.7 %
+! RF Platen
+| 19 W
+| 0 W
+|-
+!
+|
+! Cycle time
+| 8 s
+| 5 s
+|}