Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
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| colspan="2" | Temperature 10 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers | | colspan="2" | Temperature 10 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers | ||
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== Experiment with process B behaviour == | |||
=== Purpose === | |||
Perhaps the most commonly occuring question posed by users of the dry etch tools is something like ' I want to etch my trenches down to a depth of 40 microns, how long should I etch?'. The answer is that it depends on the width of the trench and on the etch load of your design (that is how many percent of the wafer it etched). | |||
An experiment has been set up to investigate the etched depth of a number of different trenches (with widths ranging from 2 microns to 300 microns) as a function of etch load. | |||
=== Results === | |||