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Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

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! colspan="3" align="center"| Multiplexed parameters  
! colspan="3" align="center"| Multiplexed parameters  
|-
|-
| Parameter   
! Parameter   
| Setting
! Setting
| Parameter
! Parameter
| Etch
! Etch
| Pass
! Pass
|-
|-
| Temperature  
! Temperature  
| 10<sup>o</sup>C
| 10<sup>o</sup>C
| SF<sub>6</sub> Flow
! SF<sub>6</sub> Flow
| 230 sccm
| 230 sccm
| 0 sccm
| 0 sccm
|-
|-
| No. of cycles  
! No. of cycles  
| 31
| 31
| O<sub>2</sub> Flow
! O<sub>2</sub> Flow
| 23 sccm
| 23 sccm
| 0 sccm
| 0 sccm
|-
|-
| Process time  
! Process time  
| 5:56 mins
| 5:56 mins
| C<sub>4</sub>F<sub>4</sub> Flow
! C<sub>4</sub>F<sub>4</sub> Flow
| 0 sccm
| 0 sccm
| 120 sccm
| 120 sccm
|-
|-
| APC mode  
! APC mode  
| manual
| manual
| Ar Flow
! RF coil
| 0 sccm
| 2800 W
| 0 sccm
| 1000 W
|-
|-
| APC setting  
! APC setting  
| 86.8 %
| 86.8 %
| RF coil
! RF Platen
| 2800 W
| 16 W
| 1000 W
| 0 W
|-
|-
|}
|}