Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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! colspan="2" align="center"| Common parameters|colspan="3" align="center"| Multiplexed parameters || | |||
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| rowspan="2"| A | |||
| colspan="2" align="center"| B | |||
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| C <!-- column 1 occupied by cell A --> | |||
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| rowspan="2" colspan="2" align="center"| F | |||
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| G <!-- column 2+3 occupied by cell F --> | |||
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| colspan="3" align="center"| H | |||
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The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process. | The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process. | ||