Specific Process Knowledge/Wafer Information: Difference between revisions
| Line 30: | Line 30: | ||
!width="15%" |Thickness | !width="15%" |Thickness | ||
!width="15%" |Resistivity | !width="15%" |Resistivity | ||
|- | |||
!SSP (single side polished) | |||
|bottom | |||
|2" | |||
|P | |||
|500 µm | |||
|1-20 Ωcm | |||
|- | |||
|- | |- | ||
| Line 53: | Line 62: | ||
|N+P | |N+P | ||
|350 µm | |350 µm | ||
|1-20 Ωcm | |1-20 Ωcm | ||
|- | |- | ||