Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions

Revision as of 11:18, 23 November 2007

Topographic measurements are measurements were you can measure hight differences on your substrate. If you measure in many spots of you substrate you can get a topographic image of your substrate.

AT DANCHIP we have three systems for topographic measurement:

Tencor - Profiler for measuring micro structures
Dektak - Profiler for measuring micro structures
Nanoman - AFM for measuring nano structures

	Tencor	Dektak	Nanoman
General description	Profiler for measuring micro structures	Profiler for measuring micro structures. Can do wafer mapping	AFM for measuring nanostructures and surface roughness
Substrate size	4"	2" -> 8"	6" or less
Max. scan range xy	Line scan x: Full substrate size	Line scan x: 50µm to 200mm	90 µm square
Max. scan range z		50Å to 262µm	1 µm (can go up to 5 µm under special settings)
Resolution xy
Resolution z
Min. feature size
Max. aspect ratio			~1 with standard cantilever.
Tip radius		5 µm	<12 nm on standard cantilever
Stress measurement	Can be done	Can be done	Cannot be done
Surface roughness	Can be done on a line scan	Can be done on a line scan	Can be done on a selected surface area

@@ Line 18: / Line 18: @@
 |-
 |Substrate size
-|4" or less
+|4"
-|8" or less
+|2" -> 8"
 |6" or less
 |-
@@ Line 56: / Line 56: @@
 |5 µm
 |<12 nm on standard cantilever
+|-
+|Stress measurement
+|Can be done
+|Can be done
+|Cannot be done
+|-
+|Surface roughness
+|Can be done on a line scan
+|Can be done on a line scan
+|Can be done on a selected surface area
 |-
 |}