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== Process C ==
== Process C ==


Process A is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Danchip wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.
Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Danchip wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.


The 100 mm wafers had an Al mask made by lift-off:
The 100 mm wafers had an Al mask made by lift-off:
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