Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon on the ICP Metal Etcher]] | ||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]] | *[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]] | ||
Revision as of 15:16, 11 December 2012
Development of continuous nanoetch
| Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 | nano1.4 | nano1.41 | nano1.42 | nano1.43 |
|---|---|---|---|---|---|---|---|---|---|
| C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 | 75 | 75 | 75 | 75 |
| SF6 (sccm) | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 |
| O2 (sccm) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| Coil power (W) | 800 (F) | 600 (F) | 800 (F) | 600 (F) | 800 (F) | 800 (F) | 800 (F) | 800 (F) | 800 (F) |
| Platen power (W) | 50 | 50 | 50 | 40 | 50 | 50 | 75 | 40 | 30 |
| Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Temperature (degs C) | 10 | 10 | -10 | -10 | -10 | -20 | -20 | -20 | -20 |
| Process time (s) | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 |
| Etch rates (nm/min) | |||||||||
| Averages | 295 | 228 | 299 | 235 | 183 | 183 | 166 | 160 | 148 |
| Std. Dev | 36 | 29 | 37 | 20 | 9 | 9 | 9 | 8 | 6 |
| Zep etch rate (nm/min) | |||||||||
| 172 | 95 | 94 | 69 | 67 | 101 | 65 | 55 | ||
| Sidewall angle (degrees) | |||||||||
| Averages | 93 | 94 | 92 | 94 | 91 | 91 | 90 | 90 | 90 |
| Std. Dev | 1 | 1 | 0 | 1 | 0 | 0 | 1 | 0 | 0 |
| CD loss (nm pr edge) | |||||||||
| Averages | -11 | -13 | -17 | -10 | -10 | -10 | -20 | -13 | -24 |
| Std. Dev | 12 | 10 | 11 | 14 | 15 | 15 | 16 | 15 | 21 |
| Bowing (nm) | |||||||||
| Averages | 31 | 42 | 13 | 16 | 6 | 6 | 3 | -3 | 0 |
| Std. Dev | 7 | 6 | 4 | 3 | 2 | 2 | 2 | 3 | 1 |
| Bottom curvature | |||||||||
| Averages | -45 | -45 | -44 | -43 | -32 | -32 | -34 | -32 | -39 |
| Std. Dev | 5 | 7 | 4 | 9 | 10 | 10 | 9 | 8 | 9 |
| Images | Images | Images | Images | Images | Images | Images | Images | Images | Images |
- Etch of nanostructures in silicon on the ICP Metal Etcher
- Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)
Development of switched nanoetch process
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.
| Recipe | Step | Temp. | Deposition step | Etch step | Process observations | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pressure | C4F8 | SF6 | O2 | Coil | Time | Pressure | C4F8 | SF6 | O2 | Coil | Platen | Hardware | Runs | |||
| nanobosch6 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 40 | 60 | 5 | 350 | 30 | LF+B100 | Click |
| nb-1.0 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 50 | 50 | 5 | 350 | 30 | LF+B100 | Click |
| nb-1.1 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 50 | 50 | 5 | 350 | 50 | LF+B100 | Click |
| nb-1.2 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 50 | 50 | 5 | 500 | 50 | LF+B100 | Click |
| barcstrip | A | 20 | 30 | 4 (3@15) | 0 | 0 | 40 | 200 | 20 | LF+B100 | Click | ||||||
| nanobosch7 | A | 20 | 2.5 | 10 | 50 | 0 | 0 | 500 | 5.0 | 10 | 40 | 60 | 5 | 350 | 30 | LF+B100 | Click |
| LF+B100 | Click | ||||||||||||||||