Specific Process Knowledge/Etch/ICP Metal Etcher/silicon: Difference between revisions
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== Silicon etching on the ICP Metal Etcher == | == Silicon etching on the ICP Metal Etcher == | ||
In the primary silicon etcher at Danchip, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF<sub>6</sub> as etch gas). Silicon is also etched by chlorine and bromine. | In the primary silicon etcher at Danchip, the [[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)|DRIE-Pegasus]], silicon is etched using a fluorine based plasma (with SF<sub>6</sub> as etch gas). Silicon is also etched by chlorine and bromine. | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Chlorine/Bromine etch of nanostructures in silicon]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Chlorine/Bromine etch of nanostructures in silicon]] | ||
Revision as of 13:35, 11 December 2012
Silicon etching on the ICP Metal Etcher
In the primary silicon etcher at Danchip, the DRIE-Pegasus (Silicon Etch)|DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF6 as etch gas). Silicon is also etched by chlorine and bromine.