Specific Process Knowledge/Etch/ICP Metal Etcher/silicon: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
== Silicon etching on the ICP Metal Etcher == | == Silicon etching on the ICP Metal Etcher == | ||
In the primary silicon etcher at Danchip, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF<sub>6< | In the primary silicon etcher at Danchip, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF<sub>6</sub> as etch gas). Silicon is also etched by chlorine and bromine. | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon]] | ||
Revision as of 13:12, 11 December 2012
Silicon etching on the ICP Metal Etcher
In the primary silicon etcher at Danchip, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF6 as etch gas). Silicon is also etched by chlorine and bromine.