Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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== Recipes on the Metal Etcher ==
=== Etching of nanostructures in silicon ===
A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are:
; Substrates
: A pattern containing 30 nm, 60 nm, 90 nm, 120 nm and 150 nm wide lines has been transferred using E-beam lithography onto three separate batches of 2" wafers (with three different thicknesses of zep resist). In order to make sure that the narrowest features are fully opened they are intentionally over-exposed in the E-beam writer (400 muC/cm2) causing the lines to widen. The resist profiles of the three batches are:
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/211nmzep|The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)]]
The exposed area is very small. The 211 nm batch has the same lines distributed in a different way that allows you monitor the progress of the etch in three different durations by cleaving off a piece of the wafer 3 times.
After E-beam exposure the wafers have been developed: N50 for 2 minutes followed by 30 seconds of IPA.
; Substrate mounting
: The 2" wafers are mounted with crystalbond in the center of 4" Si carriers that have an oxide layer facing the plasma.
; Conditioning the process chamber
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
!Recipe Sinano
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano3|3.0]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano31|3.1]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano32|3.2]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33|3.3]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano34|3.4]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano4|4.0]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano35|3.5]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano36|3.6]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33-2|3.3]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan37|3.7]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan331|3.31]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan331-2|3.31]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan332|3.32]]
|-
!Cl<sub>2</sub> (sccm)
|0
|0
|0
|0
|0
|20
|15
|15
|0
|0
|0
|0
|0
|-
!BCl<sub>3</sub> (sccm)
|5
|3
|5
|5
|5
|0
|5
|5
|5
|5
|5
|5
|5
|-
!HBr (sccm)
|15
|17
|15
|15
|15
|0
|0
|0
|15
|15
|15
|15
|15
|-
! Coil power (W)
|900 L
|900 F
|900 F
|900 F
|900 F
|900 L
|900 L
|900 F
|900 F
|900 L
|900 F
|900 F
|900 F
|-
!Platen power (W)
|50
|50
|60
|75
|90
|60
|60
|60
|75
|60
|75
|75
|30
|-
! Pressure (mtorr)
|2
|2
|2
|2
|2
|2
|5
|10
|2
|10
|2
|2
|2
|-
!Temperature (<sup>o</sup>C)
| 20
| 20
| 20
| 20
| 20
| 20
| 20
| 20
| 20
| 50
| 50
| 50
| 50
|-
! Spacers (mm)
| 100
| 100
| 100
| 100
| 100
| 100
| 100
| 100
| 100
| 100
| 100
| 30
| 100
|-
! Process time (s)
|150
|180
|120
|180
|120
|90
|120
|180
|300
|180
|180
|180
|180
|-
! colspan="14" align="center"| Etch rates (nm/min)
|-
| Averages||311||104||92||105||116||169||108||79||101||66||91||98||59
|-
| Std. Dev||44||15||15||21||22||9||11||31||29||4||28||18||12
|-
! colspan="14" align="center"| Zep etch rate (nm/min)
|-
| || ||30||40||51||67|| || ||45||59|| ||53||36||19
|-
! colspan="14" align="center"| Sidewall angle (degrees)
|-
| Averages||82||82||82||82||82||84||81||83||83||85||80||83||79
|-
| Std. Dev||2||2||1||1||1||1||1||2||2||1||3||2||2
|-
! colspan="14" align="center"| CD loss (nm pr edge)
|-
| Averages||65||-11||-15||-2||-11||67||63||-29||-5||-29||10||-14||-17
|-
| Std. Dev||30||5||2||4||3||29||27||6||5||8||7||8||10
|-
! colspan="14" align="center"| Bowing (nm)
|-
| Averages||31||31||15||6||5||22||12||15||28||13||25||1||-2
|-
| Std. Dev||6||7||3||6||4||5||2||6||9||7||5||2||2
|-
! colspan="14" align="center"| Bottom curvature
|-
| Averages||-9||-6||-9||-11||-9||9||-4||-8||-24||-2||-9||-13||-10
|-
| Std. Dev||22||19||19||11||7||17||15||15||12||15||13||17||18
|-
|}
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Nanoetch on DRIE-Pegasus]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano1|1 - the first nanoetch]]

Revision as of 20:59, 10 December 2012

The ICP Metal Etcher

The ICP Metal Etcher allows you to dry etch a small set of metals that includes aluminium, titanium, chromium, titanium tungsten and molybdenum (along with the related oxides and nitrides). It is, despite its name, strictly forbidden to etch (or expose to plasma) other metals. In order to do so use the IBE/IBSD Ionfab 300.

The gasses available for etching include flourine, chlorine and bromine.

Process information

An overview of the performance of the ICP Metal Etcher and some process related parameters

Purpose Dry etch of
  • Metals such as aluminium, chromium and titanium and the related oxides and nitrides
  • Metals such as molybdenum, tungsten, titanium tungsten
Performance Etch rates
  • Alumninium : ~350 nm/min (depending on features size and etch load)
Anisotropy
  • Good
Process parameter range Process pressure
  • ~0.1-95 mTorr
Gas flows
  • SF6: 0-100 sccm
  • O2: 0-100 sccm
  • C4F8: 0-100 sccm
  • Ar: 0-100 sccm
  • CF4: 0-100 sccm
  • H2: 0-30 sccm
  • CH4: 0-50 sccm
  • BCl3: 0-100 sccm
  • Cl2: 0-100 sccm
  • HBr: 0-100 sccm
Substrates Batch size
  • 1 6" wafer per run
  • 1 4" wafer per run
  • 1 2" wafer per run
  • Or several smaller pieces on a carrier wafer
Substrate material allowed
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Possible masking material
  • Photoresist/e-beam resist
  • PolySilicon, Silicon oxide or silicon (oxy)nitride
  • Aluminium, titanium or chromium
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