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Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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=== Titanium etch ===
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Ti etch'''
|-
! Parameter
! width="200" | Process 1
! width="200" | Process 2
|-
! Cl<sub>2</sub> (sccm)
| 30
| 30
|-
! HBr (sccm)
| -
| -
|-
! Pressure (mTorr)
| 3,  Strike 3 secs @ 15 mTorr???
| 3
|-
! Coil power (W)
| 800
| 900
|-
! Platen power (W)
| 100
| 50
|-
! Temperature (<sup>o</sup>C)
| 20
| 20
|-
! Spacers (mm)
| 30
| 30
|-
! Etch rate (nm/min)
| 152
| 64
|-
!AZ resist selectivity
| 0.67
| 0.83
|-
|}


===Chromium etch===
===Chromium etch===