Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
| Line 17: | Line 17: | ||
**[[/IBE Ti etch|Ti etch with zep 520A as masking material]] | **[[/IBE Ti etch|Ti etch with zep 520A as masking material]] | ||
**Au etch with Ti as masking material | **Au etch with Ti as masking material | ||
*[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe | *[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe]] | ||
*Etch in Stainless steel with X as masking material | *Etch in Stainless steel with X as masking material | ||
*Process develop | *Process develop | ||