Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
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[[image:IBE-Si-ER-contour.jpg|400x400px|thumb|center|IBE etch rate only shows a dependency on Beam Current and Beam Voltage. Values found on the plot should always be tested before use.]] | [[image:IBE-Si-ER-contour.jpg|400x400px|thumb|center|IBE etch rate only shows a dependency on Beam Current and Beam Voltage. Values found on the plot should always be tested before use.]] | ||
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[[image:IBE-Si-CA-contour.jpg|400x400px|thumb|center| | [[image:IBE-Si-CA-contour.jpg|400x400px|thumb|center|The angle in the corner of an etch structure showed a dependency on Beam and Acc. Voltage and Incident angle, with no interactions between any parameters. Values found on the plot should always be tested before use.]] | ||
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