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Specific Process Knowledge/Wafer and sample drying/Critical Point Dryer: Difference between revisions

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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
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|style="background:WhiteSmoke; color:black"|0<sup>o</sup>C to 45<sup>o</sup>C  
0<math>\rm{^o}</math>C temperature to 45<math>\rm{^o}</math>C  
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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==Comparison of samples dried in air and with Critical Point Dryer==
==Comparison of samples dried in air and with Critical Point Dryer==
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