Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

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*0-1000 <sup>o</sup>C
*0-1000 <sup>o</sup>C
*Temperature ramp upto 300 <sup>o</sup>C/min
*Temperature ramp up to 300 <sup>o</sup>C/min
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure

Revision as of 16:27, 3 December 2012

Jipelec - Rapid Thermal Processing

Jipelec RTP: Positioned in cleanroom 1

The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).

The user manual(s), technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose RTP annealing
Process parameter range Process Temperature
  • 0-1000 oC
  • Temperature ramp up to 300 oC/min
Process pressure
  • 1 atm
  • vacuum
Gasses on the system
  • N2
Substrates Batch size
  • 1 4" wafer (or 2" wafers) per run
  • Small samples
Substrate material allowed

A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials)

  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Quartz
  • Polysilicon
  • Titan
  • III-V materials (on graphite carrier)
  • Silicon wafers (new from the box or RCA cleaned)
  • In doubt: look at the cross contamination chart or send a mail to the Furnace group.
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