Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

Revision as of 11:58, 3 December 2012

D1 Furnace Apox

D1 Furnace Apox is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 ^oC. Running a batch of apox wafers (oxide>5µm) can take several weeks.

This furnace is positioned in III-V cleanroom. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace.

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: with bubbler (water steam + N₂)
Performance	Film thickness	Wet SiO₂: used for layer thickness >5µm
Process parameter range	Process Temperature	1150 ^oC
	Process pressure	1 atm
	Gas flows	N₂:5 sccm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)

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 ==D1 Furnace Apox==
-[[Image:D1.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]]
+[[Image:APOX.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]]
 D1 Furnace Apox is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide>5µm) can take several weeks.