Specific Process Knowledge/Thermal Process

Choose a process type

• Oxidation - grow a thermal oxide
• Annealing
• Dope with Boron
• Dope with Phosphorus

Choose an equipment to use

• A1 Bor Drive-in furnace - For oxidation of Si wafers and for drive-in after boron pre-dep
• A2 Bor Pre-dep furnace - For pre-deposition (doping) of boron on Si wafers
• A3 Phosphor Drive-in furnace - For oxidation of new wafers and for drive in of Phosphorus pre-dep
• A4 Phosphor Pre-dep furnace - Dope with Phosphorus: For predeposition of Phosphorus on wafers
• C1 Furnace Anneal-oxide - For oxidation and annealing, up to 6" wafer
• C2 Gate Oxide furnace - For growing of Gate Oxide on new wafers
• C3 Anneal-bond furnace - For annealing and annealing of bonded wafers
• C4 Aluminium Anneal furnace - For oxidation and annealing of wafers containing Aluminium
• Furnace Noble - For non-clean annealing and oxidation
• Furnace APOX - Furnace for growing very thick oxide
• Jipelec RTP - For Rapid Thermal Anneal of III-V materials and Silicon based material
• BCB Curing Oven - ...
• Resist Pyrolysis Furnace - For pyrolysis of different resist layers

The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000°C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample