Jump to content

Specific Process Knowledge/Thermal Process/BCB Curing Oven: Difference between revisions

Line 26: Line 26:
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*BCB curing and metal alloying
*BCB curing
*Metal alloying
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Line 37: Line 38:
*Low N<sub>2</sub> flow: 5 SLM
*Low N<sub>2</sub> flow: 5 SLM
*High N<sub>2</sub> flow: Max 16.7 SLM
*High N<sub>2</sub> flow: Max 16.7 SLM
|-
|style="background:LightGrey; color:black"|Pressure
|style="background:WhiteSmoke; color:black"|
*Atmospheric pressure or vacuum
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
(Remember to use the right carrier wafer)
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Several small samples (placed on a carrier wafer)
*Several small samples  
*One 50 mm wafer (placed on a carrier wafers)
*One 50 mm wafer  
*One 100 mm wafer
*One 100 mm wafer
|-
|-
| style="background:LightGrey; color:black"|Allowed materials  
| style="background:LightGrey; color:black"|Allowed materials  
'''Use the right carrier wafer'''
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*BCB
*BCB