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Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions

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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>RIE1</b>
|style="background:WhiteSmoke; color:black"|<b>SEM Leo</b>
|style="background:WhiteSmoke; color:black"|<b>RIE2</b>
|style="background:WhiteSmoke; color:black"|<b>SEM Zeiss</b>
|style="background:WhiteSmoke; color:black"|<b>SEM FEI</b>
|style="background:WhiteSmoke; color:black"|<b>SEM Jeol</b>
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|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Dry etch of
|style="background:LightGrey; color:black"|Imaging
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
* Any conducting/semiconducting material
*Silicon oxide
* Thin layers (below some 10 microns) of insulators
*Silicon (oxy)nitride
*Resist
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
* All samples
*Silicon oxide
|style="background:WhiteSmoke; color:black"|
*Silicon (oxy)nitride
* All samples
*Resist and other polymers
* Bulk insulators such as polymer-, glass or quartz wafers
|style="background:WhiteSmoke; color:black"|
* Samples from the real world
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Etch rates
|style="background:LightGrey; color:black"|Resolution
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
* leo
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
* zeiss
*Silicon oxide: ~0.02-0.15 µm/min
|style="background:WhiteSmoke; color:black"|
*Silicon (oxy)nitride: ~0.02-? µm/min
* fei
|style="background:WhiteSmoke; color:black"|
* jeol
|-
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|style="background:LightGrey; color:black"|Anisotropy
|style="background:LightGrey; color:black"|Anisotropy
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|-
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Max pressure
|style="background:LightGrey; color:black"|Detectors
|style="background:WhiteSmoke; color:black"|
* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
* Backscatter electron (QBSD)
|style="background:WhiteSmoke; color:black"|
* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
* Backscatter electron (QBSD)
* Variable pressure secondary electron (VPSE)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*800 mTorr
* Secondary electron (ETD)
* Inlens secondary electron (TLD)
* Backscatter electron (BSD)
* Variable pressure secondary electron (LVD)
* High resolution varable pressure secondary (Helix)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*949 mTorr
* Secondary electron (SEI)
* Backscatter electron (BEI)
|-
|-
|style="background:LightGrey; color:black"|Max R.F. power
|style="background:LightGrey; color:black"|Stage
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*600 W
*leo
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*600 W
*zeiss
|style="background:WhiteSmoke; color:black"|
*fei
|style="background:WhiteSmoke; color:black"|
*jeol
|-
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Electron source
|style="background:WhiteSmoke; color:black"|
* FEG (Field Emission Gun) source
|style="background:WhiteSmoke; color:black"|
* FEG (Field Emission Gun) source
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SF<sub>6</sub>: 0-52 sccm
* FEG (Field Emission Gun) source
*O<sub>2</sub>: 0-99 sccm
*CHF<sub>3</sub>: 0-100 sccm
*CF<sub>4</sub>: 0-42 sccm
*Ar: 0-146 sccm
*N<sub>2</sub>: 0-100 sccm
*C<sub>2</sub>F<sub>6</sub>: 0-24 sccm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SF<sub>6</sub>: 0-130 sccm
* Tungsten filament
*O<sub>2</sub>: 0-99 sccm
*CHF<sub>3</sub>: 0-99 sccm
*CF<sub>4</sub>: 0-84 sccm
*Ar: 0-145 sccm
*N<sub>2</sub>: 0-99 sccm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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