Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide: Difference between revisions

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 ==Deposition of Titanium Oxide==
 Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
+==Comparison of the methods for deposition of Titanium Oxide==
+{| border="1" cellspacing="0" cellpadding="4" align="center"
+!
+!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
+! Sputter technique Lesker
+|- valign="top" align="left"
+| Stoichiometry
+|
+*Can probably be varied (sputter target: Ti, O2 added during deposition)
+|
+*
+|-valign="top" align="left"
+|Film thickness
+|
+*~10nm - ~0.5µm(>2h)
+|
+*Thin layers
+|- valign="top" align="left"
+|Process Temperature
+|
+*Expected to be below 100<sup>o</sup>C
+|
+*
+|- valign="top" align="left"
+|Step coverage
+|
+*Not Known
+|
+*
+|- valign="top" align="left"
+|Film quality
+|
+*
+|
+*
+|- valign="top" align="left"
+|Batch size
+|
+*1 50mm wafer
+*1 100mm wafer
+*1 150mm wafer
+*1 200mm wafer
+*Smaller pieces can be mounted with capton tape
+|
+*
+|- valign="top" align="left"
+|Material allowed
+|
+*Almost any materials
+*not Pb and very poisonous materials
+|
+*
+|-
+|}