Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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==C1 Anneal-oxide furnace== | ==C1 Anneal-oxide furnace== | ||
[[Image:C1.JPG|thumb|300x300px|C1 | [[Image:C1.JPG|thumb|300x300px|C1 Anneal-oxide furnace. Positioned in cleanroom 2]] | ||
The C1 Anneal-oxide furnace is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD1). Both 100 mm and 150 mm wafers can be processed in the furnace. | The C1 Anneal-oxide furnace is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD1). Both 100 mm and 150 mm wafers can be processed in the furnace. | ||