Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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==C3 | ==C3 Anneal-bond furnace== | ||
[[Image:C3.JPG|thumb|300x300px|C3 | [[Image:C3.JPG|thumb|300x300px|C3 Anneal-Bond furnace. Positioned in cleanroom 2]] | ||
C3 | The C3 Anneal-bond furnace is a Tempress horizontal furnace for oxidation and annealing of (bonded) silicon wafers. | ||
This furnace is the third furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that | This furnace is the third furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that come directly from bonding in the EVG NIL (assuming they were very clean when entering EVG NIL and not contain any metal). Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart]. | ||
'''The user manual, technical information and contact information can be found in LabManager:''' | |||
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=89 Furnace C3: Anneal-bond]''' | |||
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=89 Anneal | |||
==Process knowledge== | ==Process knowledge== | ||