Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
==A1 Bor drive-in furnace== | ==A1 Bor drive-in furnace== | ||
[[Image:A1.JPG|thumb|300x300px|A1 Bor | [[Image:A1.JPG|thumb|300x300px|A1 Bor Drive-in furnace: positioned in cleanroom 2]] | ||
The A1 Bor Drive-in furnane is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Bor pre-deposition takes place in the A2 Bor pre-dep furnace. The A1 furnace can also be used for drive in of boron which has been ion implanted. | The A1 Bor Drive-in furnane is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Bor pre-deposition takes place in the A2 Bor pre-dep furnace. The A1 furnace can also be used for drive in of boron which has been ion implanted. | ||