Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
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*Results from the acceptance test: | *Results from the acceptance test: | ||
**[[/IBSD of TiO2|Deposition of TiO2]] | **[[/IBSD of TiO2|Deposition of TiO2]] | ||
**[[/IBSD of SiO2|Deposition of SiO2]] | **[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2|Deposition of SiO2]] | ||
**[[/IBSD of Si|Deposition of Si]] | **[[/IBSD of Si|Deposition of Si]] | ||
Revision as of 11:31, 30 November 2012
IBE/IBSD Ionfab 300: milling, dry etching and deposition in the same tool
IBE: Ion Beam Etch
IBSD: Ion Beam Sputter Deposition
This Ionfab300 from Oxford Instruments is capable of of both ion sputter etching/milling and sputter deposition. The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).
Process information
Etch
- Some general process trends
- Results from the acceptance test:
- Au etch with zep520A as masking material
- Ti etch with zep 520A as masking material
- Au etch with Ti as masking material
- Magnetic stack containing Ta/MnIr/NiFe etch
- Etch in Stainless steel with X as masking material
- Process develop
Deposition
- Results from the acceptance test:
Purpose |
|
. |
---|---|---|
Performance | Etch rates |
Typical 1-100 nm/min depending om material and process parameters |
Anisotropy |
| |
Uniformity |
| |
Process parameters | Gas flows |
Etch source:
Deposition source:
|
Substrates | Batch size |
|
Materials allowed |
| |
Possible masking material |
|