Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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|style="background:LightGrey; color:black"|Etch rates | |style="background:LightGrey; color:black"|Etch rates | ||
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* Standard processes A and B up to 15 µm/min | * Standard processes A and B up to 15 µm/min depending on etch load and feature size | ||
* | * Other processes: Any number from 200 nm/min to 10 µm/min | ||
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|style="background:LightGrey; color:black"|Uniformity | |style="background:LightGrey; color:black"|Uniformity | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | * For standard processes better than 3 % across a 150 mm wafer. | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | ||