Specific Process Knowledge/Characterization/Four-Point Probe: Difference between revisions

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 !style="background:silver; color:black;" align="center"|Purpose
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+|style="background:WhiteSmoke; color:black"| Resistance and resistivity measurement
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 Look at the process knowlege
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-!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
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-*900-1150 <sup>o</sup>C
+*room temperature
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 |style="background:LightGrey; color:black"|Process pressure
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 *1 atm
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-|style="background:LightGrey; color:black"|Gasses on the system
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-*Ar, N<sub>2</sub>
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 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
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-*1-30 4" wafer (or 2" wafers) per run
+*1 4" wafer per measurement
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 | style="background:LightGrey; color:black"|Substrate material allowed
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 *Silicon wafers (new from the box or RCA cleaned)
-*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
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 |}