Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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==C1 Furnace Anneal | ==C1 Furnace Anneal-oxide== | ||
[[Image:C1.JPG|thumb|300x300px|C1 Furnace Anneal | [[Image:C1.JPG|thumb|300x300px|C1 Furnace Anneal-oide. Positioned in cleanroom 2]] | ||
C1 | The C1 Anneal-oxide furnace is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD1). Both 4" and 6" wafers can be processed in the furnace. | ||
C1 is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to process wafers that comes directly from the A and B stack furnace or from PECVD1. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart]. | |||
'''The user manual | '''The user manual, technical information and contact information can be found in LabManager:''' | ||
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Furnace C1: Anneal-oxide]''' | ||
==Process knowledge== | ==Process knowledge== | ||