Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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 [[Image:A1.JPG|thumb|300x300px|A1 Boron drive-in furnace: positioned in cleanroom 2]]
-The A1 Furnace Bor drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a predeposition and oxidation of the boron phase layer. Bor predeposition takes place in the A2 Furnace Bor pre-dep. The A1 furnace can also be used for drive in of boron which has been ion implanted.
+The A1 Furnace Bor drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Bor pre-deposition takes place in the A2 Furnace Bor pre-dep. The A1 furnace can also be used for drive in of boron which has been ion implanted.
 A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 Furnace Gate oxide are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates that are allowed to enter this furnace. Check [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart].