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Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide
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*Drive-in of boron
*Oxidation of silicon  
*Oxidation of boron phase layer
*Annealing of the oxide
|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Dry
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| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
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|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon wafers (new or RCA cleaned wafers)
*From A2 furnace directly (e.g. incl. Predep HF)
*From A2 furnace directly (e.g. incl. Predep HF)
*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group]
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