Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"|Drive-in of boron | |style="background:LightGrey; color:black"| | ||
*Drive-in of boron | |||
*Oxidation of silicon | |||
*Oxidation of boron phase layer | |||
*Annealing of the oxide | |||
|style="background:WhiteSmoke; color:black"|Oxidation: | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
*Dry | *Dry | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
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*Silicon wafers (new | *Silicon wafers (new or RCA cleaned wafers) | ||
*From A2 furnace directly (e.g. incl. Predep HF) | *From A2 furnace directly (e.g. incl. Predep HF) | ||
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