Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

Revision as of 15:53, 28 November 2012

A1 Furnace Bor drive-in

A1 Boron drive-in furnace: positioned in cleanroom 2

The A1 Furnace Bor drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a predeposition and oxidation of the boron phase layer. Bor predeposition takes place in the A2 Furnace Bor pre-dep. The A1 furnace can also be used for drive in of boron which has been ion implanted.

A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 Furnace Gate oxide are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates that are allowed to enter this furnace. Check the cross contamination chart.

The user manual, quality control procedure and results, technical information and contact information can be found in LabManager:

A1 Furnace: Bor Drive-in

Process knowledge

Boron drive-in: look at the Dope with Boron page
Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

Overview of the performance of the boron drive-in furnace and some process related parameters

Purpose	Drive-in of boron Oxidation of silicon Oxidation of boron phase layer Annealing of the oxide	Oxidation: Dry Wet: with torch (H₂+O₂)
Performance	Film thickness	Dry SiO₂: 50 Å to ~2000 Å (takes too long to make it thicker) Wet SiO₂: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 ^oC
	Process pressure	1 atm
	Gasses on the system	O₂, H₂ and N₂
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new or RCA cleaned wafers) From A2 furnace directly (e.g. incl. Predep HF)

@@ Line 21: / Line 21: @@
 |-
 !style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide
+|style="background:LightGrey; color:black"|
+*Drive-in of boron
+*Oxidation of silicon
+*Oxidation of boron phase layer
+*Annealing of the oxide
 |style="background:WhiteSmoke; color:black"|Oxidation:
 *Dry
@@ Line 52: / Line 56: @@
 | style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+*Silicon wafers (new or RCA cleaned wafers)
 *From A2 furnace directly (e.g. incl. Predep HF)
-*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group]
 |-
 |}