Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
==A1 Furnace Bor drive-in== | ==A1 Furnace Bor drive-in== | ||
[[Image:A1.JPG|thumb|300x300px|A1 Boron drive in furnace: positioned in cleanroom 2]] | [[Image:A1.JPG|thumb|300x300px|A1 Boron drive-in furnace: positioned in cleanroom 2]] | ||
The A1 Furnace Bor drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a predeposition and oxidation of the boron phase layer. Bor predeposition takes place in the A2 Furnace Bor pre-dep. The A1 furnace can also be used for drive in of boron which has been ion implanted. | The A1 Furnace Bor drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a predeposition and oxidation of the boron phase layer. Bor predeposition takes place in the A2 Furnace Bor pre-dep. The A1 furnace can also be used for drive in of boron which has been ion implanted. | ||