Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation of gate-oxide and other especially clean oxides | |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation and annealing of wafers from the B-stack and PECVD1. At the moment also used for general oxidation of 6" wafers.||Oxidation of gate-oxide and other especially clean oxides.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides||Oxidation and annealing for all materials. | ||
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! Dry oxidation | ! Dry oxidation | ||