Jump to content

Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Mdyma (talk | contribs)
danchip
584 edits
Mdyma (talk | contribs)
danchip
584 edits
No edit summary
Line 5: Line 5:
The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).  
The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).  


 
==Overview of the performance of the Jipelec RTP and some process related parameters==
{| border="2" cellspacing="0" cellpadding="0"  
{| border="2" cellspacing="0" cellpadding="0"  
|-
|-

Revision as of 15:22, 26 November 2012

Jipelec - Rapid Thermal Processing

Jipelec RTP: Positioned in cleanroom 1

The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose RTP annealing
Performance
Process parameter range Process Temperature
  • 0-1000 oC
  • High temperature ramp >300 oC
Process pressure
  • 1 atm
  • vacuum
Gasses on the system
  • N2
Substrates Batch size
  • 1 4" wafer (or 2" wafers) per run
  • Small samples
Substrate material allowed
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Quartz
  • Polysilicon
  • Titan
  • III-V materials (on graphite carrier)
  • Silicon wafers (new from the box or RCA cleaned)
  • In doubt: look at the cross contamination chart or send a mail to the Furnace group.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP&oldid=7255"