Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

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==Overview of the performance of Apox furnace and some process related parameters==
==Overview of the performance of Apox furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="0"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Oxidation and annealing  
|style="background:LightGrey; color:black"|Oxidation and annealing  
|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|Oxidation:
*Wet: with bubbler (water steam + N<sub>2</sub>)
*Wet: with bubbler (water steam + N<sub>2</sub>)
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Wet SiO<sub>2</sub>: used for layer thickness >5µm
*Wet SiO<sub>2</sub>: used for layer thickness >5µm
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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*N<sub>2</sub>:? sccm
*N<sub>2</sub>:? sccm
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|

Revision as of 15:01, 26 November 2012

D1 Furnace Apox

File:D1.JPG
D1 Furnace Apox: positioned in cleanroom ?

D1 Furnace Apox is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 oC. Running a batch of apox wafers (oxide>5µm) can take several weeks.

This furnace is positioned in III-V cleanroom. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace.

Process knowledge


Overview of the performance of Apox furnace and some process related parameters

Purpose Oxidation and annealing Oxidation:
  • Wet: with bubbler (water steam + N2)
Performance Film thickness
  • Wet SiO2: used for layer thickness >5µm
Process parameter range Process Temperature
  • 1150 oC
Process pressure
  • 1 atm
Gas flows
  • N2:? sccm
Substrates Batch size
  • 1-200 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box)
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