Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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*O<sub>2</sub>: 0-5 sccm
*O<sub>2</sub>: 0-5 sccm
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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Revision as of 14:59, 26 November 2012

Noble Furnace

This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius. The Noble Furnace is located in service room 3.

Overview of the performance of the Noble Furnace

Purpose Oxide growth, annealing
Performance
Process parameter range Process Temperature
  • 20-1000 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2:0-5 sccm
  • O2: 0-5 sccm
Substrates Batch size
  • 1-25 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
  • Contact furnace@danchip.dtu.dk before annealing or oxidising metals in the furnace
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