Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions
No edit summary |
|||
Line 6: | Line 6: | ||
==Overview of the performance of the Noble Furnace== | ==Overview of the performance of the Noble Furnace== | ||
{| border="2" cellspacing="0" cellpadding=" | {| border="2" cellspacing="0" cellpadding="0" | ||
|- | |- | ||
!style="background:silver; color:black;" align=" | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"|Oxide growth, annealing | |style="background:LightGrey; color:black"|Oxide growth, annealing | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
|- | |- | ||
!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | * | ||
|- | |- | ||
!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Line 29: | Line 29: | ||
|style="background:LightGrey; color:black"|Gasses on the system | |style="background:LightGrey; color:black"|Gasses on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *N<sub>2</sub>:0-5 sccm | ||
*O<sub>2</sub>: 0-5 sccm | |||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||
Line 39: | Line 40: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (new from the box or RCA cleaned) | *Silicon wafers (new from the box or RCA cleaned) | ||
*Contact [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk] before annealing or oxidising metals in the furnace | |||
|- | |- | ||
|} | |} |
Revision as of 14:59, 26 November 2012
Noble Furnace
This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius. The Noble Furnace is located in service room 3.
Overview of the performance of the Noble Furnace
Purpose | Oxide growth, annealing | |
---|---|---|
Performance |
| |
Process parameter range | Process Temperature |
|
Process pressure |
| |
Gasses on the system |
| |
Substrates | Batch size |
|
Substrate material allowed |
|