Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | *Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | ||
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page | *Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page | ||
==Overview of the performance of Anneal Bond furnace and some process related parameters== | ==Overview of the performance of Anneal Bond furnace and some process related parameters== | ||
{| border="2" cellspacing="0" cellpadding=" | {| border="2" cellspacing="0" cellpadding="0" | ||
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!style="background:silver; color:black;" align=" | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"|Oxidation and annealing | |style="background:LightGrey; color:black"|Oxidation and annealing | ||
|style="background:WhiteSmoke; color:black"|Oxidation: | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
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*Wet: with bubbler (water steam + N<sub>2</sub>) | *Wet: with bubbler (water steam + N<sub>2</sub>) | ||
|- | |- | ||
!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: | *Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (takes too long to make it thicker) | ||
*Wet SiO<sub>2</sub>: | *Wet SiO<sub>2</sub>: 50 Å to ~5 µm (takes too long to make it thicker) | ||
|- | |- | ||
!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub>: | *N<sub>2</sub>:5 sccm | ||
*O<sub>2</sub>:5 sccm | |||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (new from the box or RCA cleaned) | *Silicon wafers (new from the box or RCA cleaned) | ||
* | *Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
*Quartz wafers (RCA cleaned) | *Quartz wafers (RCA cleaned) | ||
*From bonding in EVG NIL directly (assuming they fulfilled the above before entering the EVG NIL) | *From bonding in EVG NIL directly (assuming they fulfilled the above before entering the EVG NIL) | ||
|- | |- | ||
|} | |} | ||