Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace

A4 Furnace Phosphor pre-dep

File:A4.jpg

A1 Boron drive in furnace: positioned in cleanroom 2

A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula POCl₃.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please send a mail to furnace@danchip.dtu.dk.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

Phosphor Pre-dep

Process knowledge

• Dope with Phosphorus

Overview of the performance of the Phosphor pre-dep furnace and some process related parameters

Purpose	Doping of Phosphor
Performance
Process parameter range	Process Temperature	900-1150 oC
	Process pressure	1 atm
	Gasses on the system	POCL3
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) In doubt: look at the cross contamination chart or please send a mail to furnace@danchip.dtu.dk