Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions
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[[Image:C4helstak.jpg|thumb|300x300px|A1 Boron drive in furnace: positioned in cleanroom 2]] | [[Image:C4helstak.jpg|thumb|300x300px|A1 Boron drive in furnace: positioned in cleanroom 2]] | ||
A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula | A4 is a furnace to dope Si wafers with Phosphor to make conductive lanes, etch stops etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) is a colourless liquid with the formula POCl<sub>3</sub>. | ||
A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please | A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart]. If you are in doubt, please send a mail to [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk]. | ||
==Overview of the performance of the Phosphor pre-dep furnace and some process related parameters== | ==Overview of the performance of the Phosphor pre-dep furnace and some process related parameters== | ||