Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace

A1 Furnace Boron drive-in

A1 Boron drive in furnace: positioned in cleanroom 2

A1 Furnace boron drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a predeposition, oxidation of the boron phase layer. Boron predeposition takes place in the A2 Furnace boron pre-dep. It can also be used for drive in of boron which has been ion implanted.

A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please send a mail to furnace@danchip.dtu.dk.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

Bor Drive-in

Process knowledge

• Boron drive-in: look at the Dope with Boron page
• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of the boron drive-in furnace and some process related parameters

Purpose	Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide	Oxidation: Dry Wet: with torch (H2+O2)
Performance	Film thickness	Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker) Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gasses on the system	O2, H2 and N2
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) From A2 furnace directly (e.g. incl. Predep HF) In doubt: look at the cross contamination chart or send a mail to the Furnace group