Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

Revision as of 14:38, 22 November 2007

The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.

The Bosch process:

The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF₆ and O₂ alternates with a passivation phase with C₄F₈.

Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch deepetch.

**Shallolr**
Process	Parameter	! Phase Etch
SF₆ flow	32 sccm
O₂ flow	8 sccm
Pressure	80 mTorr
RF-power	30 W

Column 1	Column 2	Column 3
A	B
A	C	D
E	F
G	F
H

@@ Line 33: / Line 33: @@
+{| border="1" cellpadding="5" cellspacing="0"
-|              ^ Heading 1            ^ Heading 2          ^
+|-
-^ Heading 3    | Row 1 Col 2          | Row 1 Col 3        |
+! Column 1 || Column 2 || Column 3
-^ Heading 4    | no colspan this time |                    |
+|-
-^ Heading 5    | Row 2 Col 2          | Row 2 Col 3        |
+| rowspan="2"| A
+| colspan="2" align="center"| B
+|-
+| C <!-- column 1 occupied by cell A -->
+| D
+|-
+| E
+| rowspan="2" colspan="2" align="center"| F
+|-
+| G <!-- column 2+3 occupied by cell F -->
+|-
+| colspan="3" align="center"| H
+|}