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| *[[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D (Micro stamp): ]] | | *[[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D (Micro stamp): ]] |
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| == The standard processes: Processes A, B, C, D and SOI ==
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| The instrument was accepted on the basis of the performance of 5 processes. These standard processes are described below.
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| {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
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| |+ '''Most commonly used processes on DRIE-Pegasus'''
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| |-
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| ! rowspan="2" | Process name
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| ! rowspan="2" | Type
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| ! rowspan="2" | Purpose
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| ! colspan="4" | Conditions during original runs
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| ! rowspan="2" | Best usage
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| |-
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| ! width="120" | Feature
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| ! width="120" | Mask material
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| ! width="120" | Etch load
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| ! width="120" | Comments
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| |-
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| ! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processA|Process A]]
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| | Bosch
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| | Fast etch
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| | 80 µm trench
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| | Photo resist
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| | 12-13 % on 6" wafer
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| |-
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| ! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processB|Process B]]
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| | Bosch
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| | Fast etch
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| | 30 µm diameter via
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| | Photo resist
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| | 12-13 % on 6" wafer
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| |-
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| |}
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| === Process A === | | === Process A === |
