Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

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 '''Standard recipes'''
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processA|Process A (Large trench): 80 µm wide trench etched down to a depth of 150 µm]]
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processB|Process B (Via etch): 30 µm diameter via etched down to a depth of 100 µm]]
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C (Nano etch): 50-300 nm posts]]
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D (Micro stamp): ]]
 == The standard processes: Processes  A, B, C, D and SOI ==
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-=== How to read the SPTS notation on process recipes ===
-To understand the SPTS short hand notation on process recipes look at two examples from the etch cycle of step1 of the Process A described below:
-# The Platen power has the setting ''120 >> 140 (1.5s) 45 '' - it is to be interpreted as:
-## In the first 1.5 seconds of the every cycle the platen power has a value that is ramped (indicated by >>) from 120 W initially to 150 W in the end
-## During the remainder of the cycle the platen power is kept constant at 45 W.
-# The Pressure has the setting ''25 (1.5 s) 90 >> 150'' - it is to be interpreted as:
-## In the first 1.5 seconds the pressure is constant at 25 mtorr.
-## During the remainder of the cycle the pressure has i higher value that is ramped from 90 initially to 150 mtorr in the last etch cycle.
 === Process A ===