Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/C4 Furnace Aluminium Anneal|C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium'' | *[[/C4 Furnace Aluminium Anneal|C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium'' | ||
*[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing'' | *[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing'' | ||
*[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide'' | *[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide'' | ||
*[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | *[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | ||
Revision as of 12:02, 21 November 2007
Choose a process type
- Oxidation - grow a thermal oxide
- Annealing
- Dope with Boron
- Dope with Phosphorus
Choose an equipment to use
- A1 Furnace Boron drive-in - For oxidation of new wafers and for drive in of Boron pre-dep
- A2 Furnace Boron pre-dep - Dope with Boron: For predeposition of Boron on wafers
- A3 Furnace Phosphorus drive-in - For oxidation of new wafers and for drive in of Phosphorus pre-dep
- A4 Furnace Phosphorus pre-dep - Dope with Phosphorus: For predeposition of Phosphorus on wafers
- C1 Furnace Gate Oxide - For growing of Gate Oxide on new wafers
- C2 Furnace Anneal Oxide - For oxidation and annealing
- C3 Furnace Anneal Bond - For annealing of bonded wafers and??
- C4 Furnace Aluminium Anneal - For oxidation and annealing of wafers containing Aluminium
- Furnace Noble - For non-clean annealing
- Furnace APOX - Furnace for growing very thick oxide
- Jipelec RTP - For Rapid Thermal Anneal of III-V materials and Silicon based material