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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions

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danchip, nanotech
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Khr (talk | contribs)
danchip, nanotech
95 edits
Line 12: Line 12:
|Neutalizer current [mA]
|Neutalizer current [mA]
|450
|450
|450
|550
|-
|-
|RF Power [W]
|RF Power [W]
|800
|800
| -
| -
|-
|-
|Beam current [mA]
|Beam current [mA]
|400
|400
|400
|500
|-
|-
|Beam voltage [V]
|Beam voltage [V]
|500
|500
|400
|600
|-
|-
|Beam accelerator voltage
|Beam accelerator voltage
|500
|500
|400
|600
|-
|-
|Ar flow to neutralizer [sccm]
|Ar flow to neutralizer [sccm]
|5.0
|5.0
| -
| -
|-
|-
|Ar flow to beam [sccm]
|Ar flow to beam [sccm]
|10.0
|10.0
| -
| -
|-
|-
|Rotation speed [rpm]
|Rotation speed [rpm]
|20
|20
| -
| -
|-
|-
|Stage angle [degrees]
|Stage angle [degrees]
|5
|5
|5
|15
|-
|-
|Helium backside cooling [Torr]
|Helium backside cooling [Torr]
|37.5
|37.5
| -
| -
|-
|-
|}
|}
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