Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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===Design of Experiment results=== | ===Design of Experiment results=== | ||
[[image:IBE magnetic DoE etch rate.jpg |600x300px|thumb|center|The etch rate did not show any dependency on incident angle. The shown results are fitted to the DoE data and may not give an accurate measure of etch rate.]] | {| border="1" cellspacing="1" cellpadding="2" | ||
[[image:IBE magnetic DoE Corner Angle.jpg|300x300px|thumb|center|The corner angle for the etch samples showed a dependency on all parameters. The general trends can be found from the plot, however for etch structures the resultant angle may differ.]] | |[[image:IBE magnetic DoE etch rate.jpg |600x300px|thumb|center|The etch rate did not show any dependency on incident angle. The shown results are fitted to the DoE data and may not give an accurate measure of etch rate.]] | ||
|[[image:IBE magnetic DoE Corner Angle.jpg|300x300px|thumb|center|The corner angle for the etch samples showed a dependency on all parameters. The general trends can be found from the plot, however for etch structures the resultant angle may differ.]] | |||
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===Conclusions=== | ===Conclusions=== | ||