Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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===Design of Experiment results=== | ===Design of Experiment results=== | ||
[[image:IBE magnetic DoE etch rate.jpg |300x300px|thumb|center|The endpoint for etching is determined by the integrated SIMS]] | |||
[[image:IBE magnetic DoE Corner Angle.jpg|300x300px|thumb|center|The endpoint for etching is determined by the integrated SIMS]] | |||
===Conclusions=== | ===Conclusions=== | ||