Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
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=== Deepetch === | === Deepetch === | ||
The deepetch recipe is designed to etch features (with sizes 2 <math>\mu</math>m) in silicon down to a depth that ranges from some 50 microns to hundreds of microns. (If you need to etch less, use shallow or Nanoetches.) It is specified to etch a 50 | The deepetch recipe is designed to etch features (with sizes 2 <math>\mu</math>m) in silicon down to a depth that ranges from some 50 microns to hundreds of microns. (If you need to etch less, use shallow or Nanoetches.) It is specified to etch a 50 µm wide trench down to a depth of 300 µm on a wafer that has a global/local etch density of 10%. | ||
The recipe is given below. | The recipe is given below. | ||
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<gallery caption="Standardization images of the deepetch recipe" widths="300px" heights="300px" perrow="2"> | <gallery caption="Standardization images of the deepetch recipe" widths="300px" heights="300px" perrow="2"> | ||
Image:jmldeep071101 pos1 2mu_010.jpg|The profile of a 2 | Image:jmldeep071101 pos1 2mu_010.jpg|The profile of a 2 µm trench | ||
image:jmldeep071101 pos5 50mu_013.jpg|The profile of a 50 | image:jmldeep071101 pos5 50mu_013.jpg|The profile of a 50 µm trench | ||
</gallery> | </gallery> | ||
As is clear from the two images ARDE also plays a role in this case: The 2 | As is clear from the two images ARDE also plays a role in this case: The 2 µm trench (widened to about 5-6 µm because of undercut/underetching) is only etched 150 µm. | ||
== Standardization procedure on the ASE == | == Standardization procedure on the ASE == | ||