Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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[[image:IBE magnetic stack A3-13.jpg|300x300px|thumb|center|Etched magnetic stack with poor structure transfer, the parameters chosen was clearly not optimal. Chosen etch parameters result in severe trenching]] | [[image:IBE magnetic stack A3-13.jpg|300x300px|thumb|center|Etched magnetic stack with poor structure transfer, the parameters chosen was clearly not optimal. Chosen etch parameters result in severe trenching]] | ||
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For a good pattern transfer with IBE a large amount of redeposition on the resist edge has been observed. To reduce this redeposition the best option seems to use a photoresist just thick enough for the wanted etch depth. An alternative is sidewall sputtering at low incident angle. However experiments has shown poor cleaning rate and for narrow structures low angles will give rise to shadowing effects. | |||
===Endpoint detection with SIMS=== | ===Endpoint detection with SIMS=== | ||